ZTX453的详细信息

Manufacturer	Diodes Incorporated
Product Category	Transistors Bipolar - BJT
RoHS	Yes
Brand	Diodes Incorporated
Configuration	Single
Transistor Polarity	NPN
Collector- Base Voltage VCBO	120 V
Collector- Emitter Voltage VCEO Max	100 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.7 V
Maximum DC Collector Current	1 A
Gain Bandwidth Product fT	150 MHz
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Package / Case	TO-92
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	40 at 150 mA at 10 V, 10 at 1 A at 10 V
DC Current Gain hFE Max	40 at 150 mA at 10 V
Maximum Power Dissipation	1 W
Minimum Operating Temperature	- 55 C
Packaging	Reel
Factory Pack Quantity	4000

如果没有正常显示，请点击下载pdf文档

DLP-HS-FPGA

如果没有正常显示，请尝试使用Chrome浏览器查看或点击下载 PDF

型号	分类	描述	制造商
GBU806	半导体分离式半导体	bridge rectifiers 8.0a 600v	Diodes Incorporated
6A10-T	半导体分离式半导体	rectifiers 1000v 6A	Diodes Incorporated
ZTX951	半导体分离式半导体	transistors bipolar - bjt pnp medium power	Diodes Incorporated
ZTX455	半导体分离式半导体	transistors bipolar - bjt npn high voltage	Diodes Incorporated
ZTX614	半导体分离式半导体	transistors darlington npn medium power darlington	Diodes Incorporated
DNBT8105-7	半导体分离式半导体	transistors bipolar - bjt 1A	Diodes Incorporated
ZTX618	半导体分离式半导体	transistors bipolar - bjt npn high gain	Diodes Incorporated
ZTX553	半导体分离式半导体	transistors bipolar - bjt pnp medium power	Diodes Incorporated
ZTX449	半导体分离式半导体	transistors bipolar - bjt npn medium power	Diodes Incorporated
ZTX453	半导体分离式半导体	transistors bipolar - bjt npn medium power	Diodes Incorporated