APT25GR120S
Microsemi Power Products Group
半导体IGBT - 单路
igbt 1200v 75a 521w d3pak
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| Standard Package | 1 |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | IGBTs - Single |
| Series | - |
| Packaging | Bulk |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 100A |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Power - Max | 521W |
| Switching Energy | 742µJ (on), 427µJ (off) |
| Input Type | Standard |
| Gate Charge | 203nC |
| Td (on/off) @ 25°C | 16ns/122ns |
| Test Condition | 600V, 25A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Supplier Device Package | D3Pak |
| Dynamic Catalog | Standard IGBTs |
如果没有正常显示，请点击下载pdf文档
| 型号 | 分类 | 描述 | 制造商 |
|---|---|---|---|
| TCS1200 | 半导体RF 晶体管 (BJT) | transistor bipo 55tu-1 | Microsemi Power Products Group |
| 1014-12 | 半导体RF 晶体管 (BJT) | trans RF bipo 39w 5A 55lt1 | Microsemi Power Products Group |
| 2729-170 | 半导体RF 晶体管 (BJT) | trans RF bipo 570w 17a 55ks1 | Microsemi Power Products Group |
| 2225-4L | 半导体RF 晶体管 (BJT) | trans RF bipo 10w 600ma 55lv1 | Microsemi Power Products Group |
| MS1582 | 半导体RF 晶体管 (BJT) | trans RF bipo 135w 8A m173 | Microsemi Power Products Group |
| MS2209 | 半导体RF 晶体管 (BJT) | trans RF bipo 220w 7A m218 | Microsemi Power Products Group |
| ARF1505 | 半导体RF FET | RF pwr mosfet 300v 25a die | Microsemi Power Products Group |
| MS2214 | 半导体RF 晶体管 (BJT) | trans bipo npn 300w 8A m218 | Microsemi Power Products Group |
| 0912-45 | 半导体RF 晶体管 (BJT) | trans RF bipo 225w 4.5a 55ct1 | Microsemi Power Products Group |
| 0912-25 | 半导体RF 晶体管 (BJT) | trans RF bipo 125w 2.5a 55ct1 | Microsemi Power Products Group |
