EPC2015
EPC
半导体FET - 单
trans gan 40v 33a bumped die
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| EPC9107 | 3.3V @ 15A, 9 ~ 28V in |
|---|---|
| Standard Package | 1 |
| Category | Discrete Semiconductor Products |
| Family | FETs - Single |
| Series | eGaN® |
| Packaging | Cut Tape (CT) |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Gate Charge (Qg) @ Vgs | 10.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 20V |
| Power - Max | - |
| Mounting Type | Surface Mount |
| Package / Case | Die Outline (11-Solder Bar) |
| Supplier Device Package | Die Outline (11-Solder Bar) |
| Dynamic Catalog | N-Channel Logic Level Gate FETs |
| Kits | 917-1010-ND - BOARD DEV FOR EPC2015 40V GAN |
| For Use With | 917-1067-ND - BOARD DEV EPC2015/23 EGAN |
| Other Names | 917-1019-1 |
如果没有正常显示，请点击下载pdf文档
| 型号 | 分类 | 描述 | 制造商 |
|---|---|---|---|
| EPC1012 | 半导体FET - 单 | trans gan 200v 3A bumped die | EPC |
| EPC1013 | 半导体FET - 单 | trans gan150v 3A bumped die | EPC |
| EPC1007 | 半导体FET - 单 | trans gan 100v 6A bumped die | EPC |
| EPC1009 | 半导体FET - 单 | trans gan 60v 6A bumped die | EPC |
| EPC2016 | 半导体FET - 单 | trans gan 100v 11a bumped die | EPC |
| EPC2015 | 半导体FET - 单 | trans gan 40v 33a bumped die | EPC |
| EPC2018 | 半导体FET - 单 | trans gan 150v 12a bumped die | EPC |
| EPC2001 | 半导体FET - 单 | trans gan 100v 25a bumped die | EPC |
| EPC2010 | 半导体FET - 单 | trans gan 200v 12a bumped die | EPC |
| EPC1001 | 半导体FET - 单 | trans gan 100v 25a bumped die | EPC |
