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EPC2016

EPC

半导体FET - 单

trans gan 100v 11a bumped die

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EPC2016的详细信息

Standard Package2,500
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
SerieseGaN®
PackagingTape & Reel (TR)
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs16 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) @ Vgs4.1nC @ 5V
Input Capacitance (Ciss) @ Vds480pF @ 50V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
For Use With917-1031-ND - BOARD DEV FOR EPC2016
Other Names917-1027-2

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DLP-HS-FPGA

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型号分类描述制造商
EPC1012半导体FET - 单trans gan 200v 3A bumped dieEPC
EPC1013半导体FET - 单trans gan150v 3A bumped dieEPC
EPC1007半导体FET - 单trans gan 100v 6A bumped dieEPC
EPC1009半导体FET - 单trans gan 60v 6A bumped dieEPC
EPC2016半导体FET - 单trans gan 100v 11a bumped dieEPC
EPC2015半导体FET - 单trans gan 40v 33a bumped dieEPC
EPC2018半导体FET - 单trans gan 150v 12a bumped dieEPC
EPC2001半导体FET - 单trans gan 100v 25a bumped dieEPC
EPC2010半导体FET - 单trans gan 200v 12a bumped dieEPC
EPC1001半导体FET - 单trans gan 100v 25a bumped dieEPC

参考报价(批量:单位)

  • 数量价格(美元)
  • 25001.33000
  • 50001.28000