HTNFET-D
Honeywell Microelectronics & Precision Sensors
半导体FET - 单
mosfet n-channel 55v 8-dip
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| Standard Package | 1 |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | FETs - Single |
| Series | HTMOS™ |
| Packaging | Bulk |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 100mA, 5V |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Gate Charge (Qg) @ Vgs | 4.3nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 28V |
| Power - Max | 50W |
| Mounting Type | Through Hole |
| Package / Case | 8-CDIP Exposed Pad |
| Supplier Device Package | 8-CDIP-EP |
| Other Names | 342-1078 |
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| 型号 | 分类 | 描述 | 制造商 |
|---|---|---|---|
| HTNFET-D | 半导体FET - 单 | mosfet n-channel 55v 8-dip | Honeywell Microelectronics & Precision Sensors |
