APT40GP90B2DQ2G
Microsemi Power Products Group
半导体IGBT - 单路
igbt 900v 101a 543w tmax
在线阅读点击下载请输入2个以上字符
请输入页码!
确认
请输入2个以上字符
请输入页码!
| Standard Package | 30 |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | IGBTs - Single |
| Series | POWER MOS 7® |
| Packaging | Tube |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 101A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 40A |
| Power - Max | 543W |
| Switching Energy | 795µJ (off) |
| Input Type | Standard |
| Gate Charge | 145nC |
| Td (on/off) @ 25°C | 14ns/90ns |
| Test Condition | 600V, 40A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Supplier Device Package | * |
| Dynamic Catalog | Standard IGBTs |
| Other Names | APT40GP90B2DQ2GMIAPT40GP90B2DQ2GMI-ND |
如果没有正常显示，请点击下载pdf文档
| 型号 | 分类 | 描述 | 制造商 |
|---|---|---|---|
| TCS1200 | 半导体RF 晶体管 (BJT) | transistor bipo 55tu-1 | Microsemi Power Products Group |
| 1014-12 | 半导体RF 晶体管 (BJT) | trans RF bipo 39w 5A 55lt1 | Microsemi Power Products Group |
| 2729-170 | 半导体RF 晶体管 (BJT) | trans RF bipo 570w 17a 55ks1 | Microsemi Power Products Group |
| 2225-4L | 半导体RF 晶体管 (BJT) | trans RF bipo 10w 600ma 55lv1 | Microsemi Power Products Group |
| MS1582 | 半导体RF 晶体管 (BJT) | trans RF bipo 135w 8A m173 | Microsemi Power Products Group |
| MS2209 | 半导体RF 晶体管 (BJT) | trans RF bipo 220w 7A m218 | Microsemi Power Products Group |
| ARF1505 | 半导体RF FET | RF pwr mosfet 300v 25a die | Microsemi Power Products Group |
| MS2214 | 半导体RF 晶体管 (BJT) | trans bipo npn 300w 8A m218 | Microsemi Power Products Group |
| 0912-45 | 半导体RF 晶体管 (BJT) | trans RF bipo 225w 4.5a 55ct1 | Microsemi Power Products Group |
| 0912-25 | 半导体RF 晶体管 (BJT) | trans RF bipo 125w 2.5a 55ct1 | Microsemi Power Products Group |
