ATP216-TL-H
ON Semiconductor
半导体分离式半导体
mosfet switching device
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Manufacturer | ON Semiconductor |
---|---|
Product Category | MOSFET |
RoHS | Yes |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 50 V |
Vgs - Gate-Source Breakdown Voltage | 10 V |
Id - Continuous Drain Current | 35 A |
Rds On - Drain-Source Resistance | 23 mOhms |
Configuration | Single |
Qg - Gate Charge | 30 nC |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 40 W |
Mounting Style | SMD/SMT |
Package / Case | ATPAK-2 |
Packaging | Reel |
Brand | ON Semiconductor |
Fall Time | 105 ns |
Forward Transconductance - Min | 58 S |
Minimum Operating Temperature | - 55 C |
Rise Time | 90 ns |
Series | ATP216 |
Factory Pack Quantity | 3000 |
Typical Turn-Off Delay Time | 220 ns |
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