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| 产品 | TPS3701 |
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| 描述 |
TPS3701 宽电源电压窗口监控器的工作电压范围为 36V 至 18V。此器件具有两个内部基准电压为 400mV 的精密比较器和两个额定电压为 25V 的开漏输出（OUTA 和 OUTB），分别用于过压和欠压检测。使用 TPS3701 作为一个窗口电压监控器，也可以作为两个单独的电压监控器；使用外部电阻器设定监控电压。 |
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| 操作 | 查看详情 | 点击下载 | 购买 |
| 制造商 | 型号 | 分类 | 描述 | 下载 |
|---|---|---|---|---|
 Austin Semicond... |
AS28C010CW-25/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
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AS28C010F-15 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-15 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-20 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-25 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-15/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3MRG-1... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010F-12/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3MRG-1... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010CW-25/I... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
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AS28F128J3MPBG-... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
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AS28C010F-20/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3M | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010F-25/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-25/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-12/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-25/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-20/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-20/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-12 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-25/8... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-25 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable |