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| 产品 | THVD1550 |
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| 描述 |
THVD15xx 是一系列抗噪 RS-485/RS-422 收发器，专用于在恶劣的工业环境中运行。这些器件的总线引脚可耐受高级别的 IEC 电气快速瞬变 (EFT) 和 IEC 静电放电 (ESD) 事件，从而无需使用其他系统级保护组件。每个器件由 5V 单电源供电。该系列中的器件具有扩展共模电压范围，因此这些器件适用于长电缆上的 多点 应用。THVD15xx 系列器件采用小型 VSSOP 封装，适用于空间受限的 应用。这些器件在自然通风环境下的额定温度范围为 –40°C 至 125°C。 |
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| 操作 | 查看详情 | 点击下载 | 购买 |
| 制造商 | 型号 | 分类 | 描述 | 下载 |
|---|---|---|---|---|
 Austin Semicond... |
AS28C010CW-25/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-15 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-20 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-25 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-15/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3MRG-1... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010F-12/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3MRG-1... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010CW-25/I... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3MPBG-... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010F-20/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28F128J3M | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... |
AS28C010F-25/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-25/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-12/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-25/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-20/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-20/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-12 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010CW-25/8... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-25 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... |
AS28C010F-15/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable |