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| 产品 | TX7316 | ||
| 描述 | TX7316 是一款适用于超声波成像系统的高度集成、高性能发送器解决方案。该器件共设有 16 个脉冲发生器电路 (PULS) 和 16 个发送/接收 (T/R) 开关，支持片上和片外波束形成器 (TxBF)。该器件还集成片上浮动电源，可减少所需高压电源的数量。 | ||
| 操作 | 查看详情 | 点击下载 | 购买 |
| 制造商 | 型号 | 分类 | 描述 | 下载 |
|---|---|---|---|---|
 Austin Semicond... | AS28C010CW-25/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-15 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010CW-15 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-20 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-15/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010CW-25 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010CW-15/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28F128J3MRG-1... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... | AS28C010F-12/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28F128J3MRG-1... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... | AS28C010CW-25/I... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28F128J3MPBG-... | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... | AS28C010F-20/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28F128J3M | plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture | ||
Austin Semicond... | AS28C010F-25/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-25/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010CW-12/X... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-25/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-20/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-20/IT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-12 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-15/XT | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010CW-25/8... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-25 | 128k x 8 eeprom eeprom memory 5 volt, byte alterable | ||
Austin Semicond... | AS28C010F-15/88... | 128k x 8 eeprom eeprom memory 5 volt, byte alterable |