器件名称 详细搜索
产品 THVD1550TI
描述

THVD15xx 是一系列抗噪 RS-485/RS-422 收发器,专用于在恶劣的工业环境中运行。这些器件的总线引脚可耐受高级别的 IEC 电气快速瞬变 (EFT) 和 IEC 静电放电 (ESD) 事件,从而无需使用其他系统级保护组件。每个器件由 5V 单电源供电。该系列中的器件具有扩展共模电压范围,因此这些器件适用于长电缆上的 多点 应用。THVD15xx 系列器件采用小型 VSSOP 封装,适用于空间受限的 应用。这些器件在自然通风环境下的额定温度范围为 –40°C 至 125°C。

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制造商 型号 分类 描述 下载
Austin Semiconductor

Austin Semicond...

AS28C010CW-25/X... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-15 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010CW-15 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-20 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-15/IT 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010CW-25 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010CW-15/X... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28F128J3MRG-1... plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture
Austin Semiconductor

Austin Semicond...

AS28C010F-12/88... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28F128J3MRG-1... plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture
Austin Semiconductor

Austin Semicond...

AS28C010CW-25/I... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28F128J3MPBG-... plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture
Austin Semiconductor

Austin Semicond...

AS28C010F-20/XT 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28F128J3M plastic encapsulated microcircuit 128mb, x8 and x16 q-flash memory even sectored, single bit per cell architecture
Austin Semiconductor

Austin Semicond...

AS28C010F-25/IT 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-25/XT 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010CW-12/X... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-25/88... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-20/88... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-20/IT 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-12 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-15/XT 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010CW-25/8... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-25 128k x 8 eeprom eeprom memory 5 volt, byte alterable
Austin Semiconductor

Austin Semicond...

AS28C010F-15/88... 128k x 8 eeprom eeprom memory 5 volt, byte alterable
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