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| 产品 | ISO1452 | ||
| 描述 | ISO141x 器件是适用于 TIA/EIA RS-485 和 RS-422 应用的电隔离差分线路收发器。这些抗噪声收发器设计用于恶劣的工业环境。这些器件的总线引脚可承受高级别的 IEC 静电放电 (ESD) 和 IEC 电子快速瞬变 (EFT) 事件，无需在总线上使用额外组件进行系统级保护。这些器件提供有基础型和增强型隔离可供选择（请参阅 增强型和基础型隔离选项）。 | ||
| 操作 | 查看详情 | 点击下载 | 购买 |
| 制造商 | 型号 | 分类 | 描述 | 下载 |
|---|---|---|---|---|
 Advanced Power ... | APT8043BFLL_04 | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS | ||
Advanced Power ... | APT8043BLL_04 | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS. | ||
Advanced Power ... | APT8030B2VFR | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Advanced Power ... | APT8043BLL | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS. | ||
Advanced Power ... | APT8058HVR | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Advanced Power ... | APT8030B2VFR_05 | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Advanced Power ... | APT8090BN | n-channel enhancement mode high voltage power mosfets | ||
Advanced Power ... | APT8043BFLL | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS | ||
Advanced Power ... | APT8030B2VR | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Microsemi Power... | APT80GA60B | 半导体IGBT - 单路 | igbt 600v 143a 625w to247 | |
Microsemi Power... | APT85GR120L | 半导体IGBT - 单路 | igbt 1200v 170a 962w to264 | |
Microsemi Power... | APT85GR120B2 | 半导体IGBT - 单路 | igbt 1200v 170a 962w to247 | |
Microsemi Power... | APT80GA60LD40 | 半导体IGBT - 单路 | igbt 600v 143a 625w to264 | |
Microsemi Power... | APT8020B2LLG | 半导体FET - 单 | mosfet n-ch 800v 38a t-max | |
Advanced Power ... | APT8035JN | n-channel enhancement mode high voltage power mosfets |