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| 产品 | LM5163-Q1 | ||
| 描述 | LM5163-Q1 同步降压转换器用于在宽输入电压范围内进行调节，从而最大限度地减少对外部浪涌抑制组件的需求。50ns 的最短可控导通时间有助于实现较大的降压比，支持从 48V 标称输入到低电压轨的直接降压转换，从而降低系统的复杂性并减少解决方案成本。LM5163-Q1 在输入电压突降至 6V 时能够根据需要以接近 100% 的占空比继续工作，使其成为适用于高性能 48V 电池汽车 应用 和 MHEV/EV 系统。 | ||
| 操作 | 查看详情 | 点击下载 | 购买 |
| 制造商 | 型号 | 分类 | 描述 | 下载 |
|---|---|---|---|---|
 Advanced Power ... | APT8043BFLL_04 | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS | ||
Advanced Power ... | APT8043BLL_04 | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS. | ||
Advanced Power ... | APT8030B2VFR | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Advanced Power ... | APT8043BLL | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS. | ||
Advanced Power ... | APT8058HVR | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Advanced Power ... | APT8030B2VFR_05 | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Advanced Power ... | APT8090BN | n-channel enhancement mode high voltage power mosfets | ||
Advanced Power ... | APT8043BFLL | power mos 7tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosFETS | ||
Advanced Power ... | APT8030B2VR | power mos V is a new generation of high voltage n-channel enhancement mode power mosFETs. | ||
Microsemi Power... | APT80GA60B | 半导体IGBT - 单路 | igbt 600v 143a 625w to247 | |
Microsemi Power... | APT85GR120L | 半导体IGBT - 单路 | igbt 1200v 170a 962w to264 | |
Microsemi Power... | APT85GR120B2 | 半导体IGBT - 单路 | igbt 1200v 170a 962w to247 | |
Microsemi Power... | APT80GA60LD40 | 半导体IGBT - 单路 | igbt 600v 143a 625w to264 | |
Microsemi Power... | APT8020B2LLG | 半导体FET - 单 | mosfet n-ch 800v 38a t-max | |
Advanced Power ... | APT8035JN | n-channel enhancement mode high voltage power mosfets |