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| 产品 | DRV5011 |
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| 描述 |
DRV5011 器件是一款数字锁存器霍尔效应传感器，专为电机和其他旋转系统而设计。该器件具有工作电压范围为 2.5V 至 5.5V 的高效低电压架构，采用标准 SOT-23 封装和外形减小 90% 的 0.4mm 超薄 X2SON 封装。输出端采用推挽驱动器，无需使用上拉电阻器，使系统更加紧凑小巧。 |
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| 操作 | 查看详情 | 点击下载 | 购买 |
| 制造商 | 型号 | 分类 | 描述 | 下载 |
|---|---|---|---|---|
 Advanced Micro ... |
AM28F512A-120FE | 512 kilobit (64 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F256-150FE | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F020A-200FE... | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F256A-120FE | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F256-150FCB | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F512A-200EE | 512 kilobit (64 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F256-120FIB | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F020-90EEB | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F256-120FEB | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F020A-90JI | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F256-150FI | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F256A-90EI | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F020-150EEB | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F020-150EI | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F256A-150PE | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F256-120FE | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F512-90EIB | 512 kilobit (64 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F256-120JI | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F010-70EI | 1 megabit (128 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F256-120JCB | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F010A-70JI | 1 megabit (128 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F020-90EC | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F256-70EE | 256 kilobit (32 K x 8-bit) cmos 12.0 volt, bulk erase flash memory | ||
Advanced Micro ... |
AM28F020A-90PEB | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory with embedded algorithms | ||
Advanced Micro ... |
AM28F020-200FC | 2 megabit (256 K x 8-bit) cmos 12.0 volt, bulk erase flash memory |