器件名称:描述搜索:
产品LM74700-Q1TI
描述

LM74700-Q1 理想二极管控制器与外部 N 沟道 MOSFET 配合工作,用作用于实现低损耗反极性保护的理想二极管整流器。3V 至 65V 的宽电源输入范围可实现对众多常用直流总线电压的控制。该器件可承受并保护由低至 –65V 的负电源电压供电的负载。利用低 RDS(ON) 外部 N 沟道 MOSFET,可以实现极低的正向压降,同时最大程度地减小 MOSFET 中耗散的功率。对于低负载,正向电压调节至 20mV,以实现 MOSFET 正常关断。建议使用具有 5V 或更低阈值电压的外部 MOSFET。当使能引脚处于低电平时,控制器关闭,消耗大约 3µA 的电流。

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