HN1B01FU-GR,LF
Toshiba Semiconductor and Storage
半导体晶体管(BJT) - 阵列
trans npn/pnp 50v 0.15a us6-pln
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| Standard Package | 3,000 |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | Transistors (BJT) - Arrays |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN, PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 200mW |
| Frequency - Transition | 150MHz, 120MHz |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Other Names | HN1B01FU-GRLF |
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| 型号 | 分类 | 描述 | 制造商 |
|---|---|---|---|
| 2SA2120 | 半导体半导体 | power amplifier applications | Toshiba Semiconductor and Storage |
| 2SA1955 | 半导体半导体 | transistor (general purpose amplifier, switchING and muting switch applications) | Toshiba Semiconductor and Storage |
| 2SK208 | 半导体半导体 | N channel junction type (general purpose and impedance converter and condenser microphone applications) | Toshiba Semiconductor and Storage |
| 2SA1225 | 半导体半导体 | transistor (power amplifier applications) | Toshiba Semiconductor and Storage |
| 1SS402 | 半导体半导体 | diode (high speed switching applications) | Toshiba Semiconductor and Storage |
| 1SV290 | 半导体半导体 | variable capacitance diode (catv tuning) | Toshiba Semiconductor and Storage |
| 2SD1221 | 半导体半导体 | audio frequency power amplifier application | Toshiba Semiconductor and Storage |
| 2SA1244 | 半导体半导体 | transistor (high current switching applications) | Toshiba Semiconductor and Storage |
| 1SS362 | 半导体半导体 | diode (ultra high speed switching application) | Toshiba Semiconductor and Storage |
| 1SS360 | 半导体半导体 | diode (ultra high speed switching application) | Toshiba Semiconductor and Storage |
