APT70GR120JD60
Microsemi Power Products Group
半导体IGBT - 模块
igbt 1200v 112a 543w sot227
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| Standard Package | 10 |
|---|---|
| Category | Discrete Semiconductor Products |
| Family | IGBTs - Modules |
| Series | - |
| IGBT Type | NPT |
| Configuration | Single |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 112A |
| Power - Max | 543W |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 70A |
| Current - Collector Cutoff (Max) | 1.1mA |
| Input Capacitance (Cies) @ Vce | 7.26nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4 |
| Supplier Device Package | SOT-227 |
| Dynamic Catalog | APT Ultra Fast NPT-IGBT® Series |
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| 型号 | 分类 | 描述 | 制造商 |
|---|---|---|---|
| TCS1200 | 半导体RF 晶体管 (BJT) | transistor bipo 55tu-1 | Microsemi Power Products Group |
| 1014-12 | 半导体RF 晶体管 (BJT) | trans RF bipo 39w 5A 55lt1 | Microsemi Power Products Group |
| 2729-170 | 半导体RF 晶体管 (BJT) | trans RF bipo 570w 17a 55ks1 | Microsemi Power Products Group |
| 2225-4L | 半导体RF 晶体管 (BJT) | trans RF bipo 10w 600ma 55lv1 | Microsemi Power Products Group |
| MS1582 | 半导体RF 晶体管 (BJT) | trans RF bipo 135w 8A m173 | Microsemi Power Products Group |
| MS2209 | 半导体RF 晶体管 (BJT) | trans RF bipo 220w 7A m218 | Microsemi Power Products Group |
| ARF1505 | 半导体RF FET | RF pwr mosfet 300v 25a die | Microsemi Power Products Group |
| MS2214 | 半导体RF 晶体管 (BJT) | trans bipo npn 300w 8A m218 | Microsemi Power Products Group |
| 0912-45 | 半导体RF 晶体管 (BJT) | trans RF bipo 225w 4.5a 55ct1 | Microsemi Power Products Group |
| 0912-25 | 半导体RF 晶体管 (BJT) | trans RF bipo 125w 2.5a 55ct1 | Microsemi Power Products Group |
