APT9M100B
Microsemi Power Products Group
半导体FET - 单
mosfet n-ch 1000v 9A to-247
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Standard Package | 30 |
---|---|
Category | Discrete Semiconductor Products |
Family | FETs - Single |
Series | POWER MOS 8™ |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2605pF @ 25V |
Power - Max | 335W |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Dynamic Catalog | N-Channel Standard FETs |
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TCS1200 | 半导体RF 晶体管 (BJT) | transistor bipo 55tu-1 | Microsemi Power Products Group |
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