器件名称

热搜:

型号:
制造商:
类别标签:
描述:

EPC2818

EPC

半导体FET - 单

trans gan 150v 12a bumped die

在线阅读点击下载

EPC2818的详细信息

Standard Package100
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
SerieseGaN®
PackagingTape & Reel (TR)
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) @ Vgs7.5nC @ 5V
Input Capacitance (Ciss) @ Vds540pF @ 100V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Dynamic CatalogN-Channel Logic Level Gate FETs
Other Names917-1037-2

如果没有正常显示,请点击下载pdf文档

DLP-HS-FPGA

如果没有正常显示,请尝试使用Chrome浏览器查看或点击下载 PDF

下载pdf文档
型号分类描述制造商
EPC1012半导体FET - 单trans gan 200v 3A bumped dieEPC
EPC1013半导体FET - 单trans gan150v 3A bumped dieEPC
EPC1007半导体FET - 单trans gan 100v 6A bumped dieEPC
EPC1009半导体FET - 单trans gan 60v 6A bumped dieEPC
EPC2016半导体FET - 单trans gan 100v 11a bumped dieEPC
EPC2015半导体FET - 单trans gan 40v 33a bumped dieEPC
EPC2018半导体FET - 单trans gan 150v 12a bumped dieEPC
EPC2001半导体FET - 单trans gan 100v 25a bumped dieEPC
EPC2010半导体FET - 单trans gan 200v 12a bumped dieEPC
EPC1001半导体FET - 单trans gan 100v 25a bumped dieEPC

参考报价(批量:单位)

  • 数量价格(美元)
  • 10019.75000
  • 30018.12500
  • 50017.25000
  • 100016.25000
  • 250015.75000
  • 500015.37500
  • 1000015.00000